Amorphous Si-F-H solar cells prepared by dc glow discharge
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7), 599-601
- https://doi.org/10.1063/1.91561
Abstract
Amorphous Si‐F‐H films were prepared by dc glow discharge in an atmosphere of SiF4 + H2. Optical and electrical measurements have been performed to evaluate the film quality. The photoconductivity of amorphous Si‐F‐H solar cell showed the efficiency of 1.3% under simulated AM1, 100‐mW/cm2 insulation.Keywords
This publication has 8 references indexed in Scilit:
- Electrical and optical properties of amorphous Si:F:H alloysPhilosophical Magazine Part B, 1979
- Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated siliconSolar Energy Materials, 1979
- Electronic density of states in discharge-produced amorphous siliconApplied Physics Letters, 1979
- Negative-States in the Gap in Hydrogenated Amorphous SiliconPhysical Review Letters, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Amorphous silicon solar cellsIEEE Transactions on Electron Devices, 1977
- Electronic properties of amorphous silicon in solar cell operationIEEE Transactions on Electron Devices, 1977
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976