Theoretical Analyses of the Angular-Dependent Photoemission from GaAs
- 17 March 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 34 (11), 660-663
- https://doi.org/10.1103/PhysRevLett.34.660
Abstract
A simple method, based on the direct transition model, has been developed for analyzing angular-energy-dependent photoemission data. Applying it to a pseudopotential band structure for GaAs all major structure in the experimental results from the (110) face can be accounted for and the wave vectors of the initial states are accurately determined. It is found that the umklapp scattering involving surface reciprocal-lattice vectors is important and that this mechanism may account for peaks previously attributed to surface states.Keywords
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