Laser Oxidation of GaAs

Abstract

A new oxidation process for forming oxide films on GaAs has been developed. Irradiation of a GaAs wafer with pulsed laser was carried out in an oxygen atmosphere in order to make a thin oxide layer onto a GaAs surface. Results of reflection electron diffraction analysis on the laser-irradiated surface indicate the oxide formation on the GaAs wafer. Auger depth profiles for the laser-irradiated GaAs showed an increase in the gallium-to-arsenic ratio within 500 Å in depth from the surface, while the oxygen concentration decreased monotonically with the distance from the surface. I-V measurements were performed to study the dielectric properties of the oxide layer and the dielectric breakdown was found to occur at about 12 V.