Switching phenomena in amorphous thin films of Ge, Cd x Te y and Sb x Se y
- 1 August 1971
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 21 (8), 878-889
- https://doi.org/10.1007/bf01725132
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- THRESHOLD SWITCHING AND THERMAL FILAMENTS IN AMORPHOUS SEMICONDUCTORSApplied Physics Letters, 1970
- Structure and electrical properties of InSb thin films prepared by plasmatic sputteringCzechoslovak Journal of Physics, 1970
- The effect of oxidation of aluminium electrodes on d.c. current-voltage characteristicsThin Solid Films, 1970
- Observation of filament formation in amorphous films during switchingThin Solid Films, 1970
- Amorphous-Semiconductor SwitchingScientific American, 1969
- BULK AND THIN FILM SWITCHING AND MEMORY EFFECTS IN SEMICONDUCTING CHALCOGENIDE GLASSESApplied Physics Letters, 1969
- Theory of Electronic Switching Effect as a Cooperative PhenomenonPhysical Review Letters, 1969
- Switching and Negative Resistance in Amorphous Boron LayersJournal of Applied Physics, 1968
- Structural model for amorphous germanium layersThin Solid Films, 1968
- Rapid, Precise Measurements of Krypton Adsorption and the Surface Area of Coarse Particles1Journal of the American Chemical Society, 1956