Drilled alternating-layer three-dimensional photonic crystals having a full photonic band gap
- 25 December 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (26), 4256-4258
- https://doi.org/10.1063/1.1332837
Abstract
We propose a three-dimensional photonic crystalstructure having a wide full photonic band gap in the optical regime, which can be fabricated by an alternating-layer deposition and etching (drilling) process. This fabrication process is much simpler than that previously reported. The combination of current lithographic technology and autocloning bias-sputtering deposition is a promising way of realizing these photonic crystals.Keywords
This publication has 13 references indexed in Scilit:
- Alignment and stacking of semiconductor photonic bandgaps by wafer-fusionJournal of Lightwave Technology, 1999
- Photonic crystal polarisation splittersElectronics Letters, 1999
- Accurate modelling of anti-resonant dipole antennas using the method of momentsElectronics Letters, 1999
- Fabrication of submicrometre 3D periodic structures composed of Si/SiO2Electronics Letters, 1997
- Second-sideband laser cooling and nonclassical motion of trapped ionsPhysical Review A, 1994
- A7 structure: A family of photonic crystalsPhysical Review B, 1994
- Photonic band gaps in three dimensions: New layer-by-layer periodic structuresSolid State Communications, 1994
- Photonic bands: simple-cubic latticeJournal of the Optical Society of America B, 1993
- Existence of a photonic gap in periodic dielectric structuresPhysical Review Letters, 1990
- Inhibited Spontaneous Emission in Solid-State Physics and ElectronicsPhysical Review Letters, 1987