MOVPE growth of HgCdTe
- 1 December 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (12C), C15-C21
- https://doi.org/10.1088/0268-1242/6/12c/004
Abstract
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors. Large area alloy uniformity is possible by the interdiffused multilayer process (IMP). However, large FPAs will need to be grown onto Si substrates to avoid thermal stress on the hybridized structure. Preliminary results are presented on a 256*256 element MWIR array. Results are also presented on optical in situ monitoring that will form the basis of improved epitaxial control in the future.Keywords
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