The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substrates
- 1 July 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2), 120-125
- https://doi.org/10.1016/0022-0248(85)90129-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Metalorganic growth of high-purity HgCdTe filmsApplied Physics Letters, 1984
- Implementation of a computer-controlled MOVPE system to grow epitaxial CMTJournal of Crystal Growth, 1984
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984
- Sims analysis of impurities at CMT/CdTe heterostructure interfacesMaterials Letters, 1984
- The growth of highly uniform cadmium mercury telluride by a new MOVPE techniqueMaterials Letters, 1984
- A study of transport and pyrolysis in the growth of Cd Hg1ȡTe by MOVPEJournal of Crystal Growth, 1983
- Metal-organic vapor deposition of CdTe and HgCdTe filmsJournal of Applied Physics, 1983
- The growth of CdxHg1−xTe using organometallicsJournal of Vacuum Science and Technology, 1982
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981
- Organometallic growth of II–VI compoundsJournal of Crystal Growth, 1981