Electron Conduction through Surface States of the Si(111)-() Surface
- 27 July 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (4), 890-893
- https://doi.org/10.1103/physrevlett.81.890
Abstract
Electronic properties of the surface are evaluated by scanning tunneling microscopy/spectroscopy (STM/STS) using artificially fabricated insulating trenches. When the surface is surrounded by a closed trench, the effect of the Schottky barrier naturally formed between the surface states and the bulk states is observed by STM. When a half-closed tape-shaped structure surrounded by the trench is fabricated, the current path is dominated by that through surface states. Its conductivity is estimated by measuring the voltage drop along the structure.
Keywords
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