The nature of photoluminescence from plastically deformed silicon
- 16 August 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 78 (2), 639-645
- https://doi.org/10.1002/pssa.2210780231
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Interaction of dislocations with impurities in silicon crystals studied byin situX-ray topographyPhilosophical Magazine A, 1983
- In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystalsPhilosophical Magazine A, 1983
- Effect of Uniaxial Stress on the Photoluminescence from Plastically Deformed SiliconJapanese Journal of Applied Physics, 1982
- Radiative Recombination on Dislocations in Silicon CrystalsJapanese Journal of Applied Physics, 1981
- Photoluminescence in plastically twisted siliconPhysica Status Solidi (a), 1981
- Modification of the dislocation luminescence spectrum by oxygen atmospheres in siliconPhysica Status Solidi (a), 1981
- Photo-EPR of Dislocations in siliconPhysica Status Solidi (a), 1979
- On the nature of the dislocation luminescence in siliconPhysica Status Solidi (b), 1977
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Some Predicted Effects of Temperature Gradients on Diffusion in CrystalsPhysical Review B, 1953