Deposition of phosphorus doped microcrystalline silicon below 70 °C at 70 MHz
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 681-684
- https://doi.org/10.1016/s0022-3093(05)80212-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- On the mechanism of doping and defect formation in a-Si: HPhilosophical Magazine Part B, 1991
- A New Technique of Boron Doping in Si:H FilmsJapanese Journal of Applied Physics, 1981