High temperature silicon carbide MOSFETs with very low drain leakage current
- 20 January 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (2), 170-171
- https://doi.org/10.1049/el:19940098
Abstract
Inversion mode n-channel MOSFETs have been built on (6H) silicon carbide (SiC) substrates, with thermal oxide as the gate insulator, and with channel lengths ranging from 1 to 25 µm. Drain leakage currents lower than 0.04 pA/µm channel width have been experimentally obtained at temperatures up to 400° C and Vd = 5V.Keywords
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