Are bare surfaces detrimental in epitaxial growth?
- 10 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23), 2648-2650
- https://doi.org/10.1063/1.104796
Abstract
For growth of epitaxial silicon-germanium structures by hydride chemical vapor deposition (CVD), the growth front is hydrogen-stabilized. Using medium energy ion scattering to examine the abruptness of an embedded Ge film in a Si(001) host, intermixing can be directly assessed. We have explored CVD films grown with varying hydrogen coverages, and find that adsorbed hydrogen serves a beneficial role in maintaining the abruptness of the interface. Embedded layers grown by molecular beam epitaxy are also more abrupt when the surface is stabilized, in this case by an adsorbed passivant such as Sb or As. Growth in the presence of a surface active agent (surfactant) results in greater control of constituents with no loss of epitaxial quality.Keywords
This publication has 11 references indexed in Scilit:
- Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactorApplied Physics Letters, 1990
- Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxyApplied Physics Letters, 1989
- Novel strain-induced defect in thin molecular-beam epitaxy layersPhysical Review Letters, 1989
- Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surfacePhysical Review Letters, 1989
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scatteringApplied Physics Letters, 1989
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986
- Ion beam crystallography of surfaces and interfacesSurface Science Reports, 1985
- Comparative study of hydrogen adsorption on Ge(100) and Ge(111) surfacesSurface Science, 1984