A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction
- 1 May 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (5), 817-819
- https://doi.org/10.1109/jqe.1982.1071620
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Carrier Density Profiles in Zn- and Cd-Diffused InPJapanese Journal of Applied Physics, 1981
- Groove GaInAsP laser on semi-insulating InPElectronics Letters, 1981
- Oxide defined TJS lasers in InGaAsP/InP DH structuresIEEE Journal of Quantum Electronics, 1979
- GaAs-GaAlAs heterostructure lasers on semi-insulating substratesIEEE Transactions on Electron Devices, 1978
- GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctionsApplied Physics Letters, 1978
- Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold currentJournal of Applied Physics, 1974