Carrier Density Profiles in Zn- and Cd-Diffused InP
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3), L197-200
- https://doi.org/10.1143/jjap.20.l197
Abstract
This letter reports on studies of Zn and Cd diffusion in (100) n-InP single crystals, carried out using Zn3P2 and Cd3P2 sources. When n-InP background carrier density N D is lower than 1016 cm-3, two diffusion fronts are observed and a p+-n--n junction is formed for Zn and Cd diffusion. A p+-n one-sided abrupt junction is formed when N D is 1016–1017 cm-3. The carrier density profiles were observed through EBIC measurement, van der Pauw method, C-V measurement using a Schottky barrier contact, and diffusion velocity dependence on n-InP background carrier density.Keywords
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