Optical emission at 1.32 μm from sulfur-doped crystalline silicon
- 4 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (5), 245-247
- https://doi.org/10.1063/1.97183
Abstract
We report the observation of efficient photoluminescence from a new sulfur-related impurity in crystalline silicon. We tentatively identify this emission as bound-exciton luminescence from sulfur-related isoelectronic impurities. We present the results of measurements of the lifetime, temperature dependence, and external efficiency of the 1.32 μm band.Keywords
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