Enhancement of long lifetime lines in photoluminescence from Si:In
- 31 July 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (1), 27-30
- https://doi.org/10.1016/0038-1098(81)91040-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Jahn-Teller-Distorted Nitrogen Donor in Laser-Annealed SiliconPhysical Review Letters, 1980
- Localized exciton bound to an isoelectronic trap in siliconPhysical Review B, 1980
- Observation of long lifetime lines in photoluminescence from Si: InSolid State Communications, 1979
- Excitons bound to an isoelectronic trap in siliconJournal of Luminescence, 1979
- A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and TlJournal of Luminescence, 1977
- Inter-impurity recombinations in semiconductorsProgress in Solid State Chemistry, 1973