Radiation-ionization energy and fano factor in semiconductors. I

Abstract

A system of equations describing the production of electron-hole pairs in semiconductors by energetic electrons and holes is given for the low energy region. It is assumed that electron-phonon interaction and interband Auger transitions constitute the dominant slowing-down mechanisms. Quantitative estimates are obtained for the influence of parameters characterizing both the band structure and the interactions under consideration on the mean number g of electrons and holes created. Also, the second order moment g² and the Fano factor Fare calculated. Furthermore, the problem of energy transfer to the crystal lattice is discussed in detail. The radiation-ionization energy ∊ and the corresponding phonon-loss part ∊ph are estimated for several typical band structure models.