On the emitter degradation by avalanche breakdown in planar transistors
- 30 September 1971
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 14 (9), 775-782
- https://doi.org/10.1016/s0038-1101(71)80002-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Avalanche degradation of hFEIEEE Transactions on Electron Devices, 1970
- On the mechanism of hFE degradation by emitter-base reverse current stressMicroelectronics Reliability, 1970
- HOT ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE BY SURFACE AVALANCHEApplied Physics Letters, 1969
- THE INTRODUCTION OF CHARGE IN SiO2 AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORSApplied Physics Letters, 1969
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969
- Avalanche degradation of hFEIEEE Transactions on Electron Devices, 1969
- Effect of surface fields on the breakdown voltage of planar silicon p-n junctionsIEEE Transactions on Electron Devices, 1967
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964