Energy and orientation effects of electron irradiation in silicon
- 1 December 1965
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 12 (120), 1203-1207
- https://doi.org/10.1080/14786436508228671
Abstract
Measurements are reported of Hall effect and conductivity on thin oriented specimens of n-type Si subject to room temperature electron bombardment at energies from 0.3 to 2.0 MeV. The carrier removal rate was found to be greater for irradiation in the 〈 100 〉 direction than in the 〈 111〉 direction throughout the energy range.Keywords
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