Validity of the kinematical approximation in transmission electron diffraction for surfaces, revisited
- 31 December 1991
- journal article
- research article
- Published by Elsevier in Ultramicroscopy
- Vol. 38 (3-4), 343-347
- https://doi.org/10.1016/0304-3991(91)90168-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- UHV microscopy of surfacesUltramicroscopy, 1991
- Atomic structure of Si(111) (√3¯×√3¯)R30°-B by dynamical low-energy electron diffractionPhysical Review B, 1990
- Bloch waves and multislice in transmission and reflection diffractionActa Crystallographica Section A Foundations of Crystallography, 1990
- Adsorption of boron on Si(111): Its effect on surface electronic states and reconstructionPhysical Review Letters, 1989
- Surface doping and stabilization of Si(111) with boronPhysical Review Letters, 1989
- Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional dopingPhysical Review Letters, 1989
- Validity of the kinematical approximation in transmission electron diffraction for the analysis of surface structuresUltramicroscopy, 1989
- Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffractionSurface Science, 1985
- Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopyJournal of Vacuum Science & Technology A, 1985
- High energy transmission electron diffraction and imaging studies of the silicon (111) 7 × 7 surface structureUltramicroscopy, 1983