Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R), 1498-1502
- https://doi.org/10.1143/jjap.24.1498
Abstract
The interdiffusion coefficients of Ga and Al were measured for GaAs-AlAs superlattices ion-implanted with Be, B, F, Si, Ar and As. The degree of interdiffusion enhancement was in the order Si>F>As>B and no interdiffusion enhancement effects were observed for Be and Ar. Except for Be, impurities with large diffusion coefficients have a tendency to enhance the impurity-induced compositional disordering.Keywords
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