Beryllium and sulfur ion-implanted profiles in gaas
- 1 April 1976
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 5 (2), 209-221
- https://doi.org/10.1007/bf02652904
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The role of elevated temperatures in the implantation of GaAsSolid-State Electronics, 1975
- Some second-phase structures in gallium arsenide annealed after implantation with zincApplied Physics Letters, 1975
- Ion-implanted microwave field-effect transistors in GaAsSolid-State Electronics, 1975
- Depth distribution of energy deposition by ion bombardmentComputer Physics Communications, 1974
- Heat treatment of ion implanted GaAsRadiation Effects, 1974
- Secondary ion emission for surface and in-depth analysis of tantalum thin filmsAnalytical Chemistry, 1973
- Electrical properties of Cd, Zn and S ion-implanted layers in GaAsRadiation Effects, 1970