Disorders produced during high-current and high-dose phosphorus ion implantation in silicon
- 1 November 1979
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 20 (3), 225-229
- https://doi.org/10.1007/bf00886022
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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