Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C

Abstract

We report the temperature dependence, between 20° and 200°C, of free carrier impact ionisation rates in GaAs along the , and directions for the electric field range 4-5 × 105 V/cm. These results should be of interest for the design of avalanche devices such as Impatt diodes which have high operating temperatures.