Hot electron dynamics in GaAs avalanche devices: Competition between ballistic behavior and intervalley scattering
- 30 November 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (11), 977-979
- https://doi.org/10.1016/0038-1101(79)90072-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Interband scattering effects on secondary ionization coefficients in GaAsSolid-State Electronics, 1978
- The band structure dependence of impact ionization by hot carriers in semiconductors: GaAsSolid-State Electronics, 1978
- Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band orderingJournal of Applied Physics, 1977
- Observation of Electronic Band-Structure Effects on Impact Ionization by Temperature TuningPhysical Review Letters, 1977
- Orientation Dependence of Free-Carrier Impact Ionization in Semiconductors: GaAsPhysical Review Letters, 1977
- Electron drift velocity in n-GaAs at high electric fieldsSolid-State Electronics, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Impact ionization rates for electrons and holes in GaAs1−xSbx alloysApplied Physics Letters, 1976
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962