Electronic Structure and Optical Properties of Si-Ge Superlattices
- 23 May 1988
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (21), 2221-2224
- https://doi.org/10.1103/physrevlett.60.2221
Abstract
We report pseudopotential calculations of the electronic structure of a (001) superlattice grown on a Si substrate. Our results show that it is possible to account for the observed optical spectra, without invoking indirect transitions, in terms of a model in which the microscopic potential and the bond lengths in the Ge layer are bulklike.
Keywords
This publication has 9 references indexed in Scilit:
- Epitaxial growth ofon Si: A direct Monte Carlo simulationPhysical Review B, 1988
- Theory of optical transitions in Si/Ge(001) strained-layer superlatticesPhysical Review B, 1987
- New optical transitions in strained Si-Ge superlatticesPhysical Review B, 1987
- New optical transitions in Si-Ge strained superlatticesPhysical Review Letters, 1987
- Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)Physical Review B, 1987
- Strain-induced confinement in (Si/) (001) superlattice systemsPhysical Review B, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Confined electron states in GaAs-Ga1-xAlxAs (0.2⩽x⩽1.0) superlatticesJournal of Physics C: Solid State Physics, 1986