The effect of metallic contamination on enhanced oxygen diffusion in silicon at low temperatures
- 30 September 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (27), L861-L866
- https://doi.org/10.1088/0022-3719/18/27/004
Abstract
Measurements are reported for the recovery of stress-induced dichroism in the 9 mu m oxygen infrared absorption band for samples given various treatments prior to stressing. Enhanced hopping rates are observed in samples deliberately contaminated with copper or iron and the degree of enhancement up to a factor of 102 depends on the conditions of the stressing treatment. It is also shown that the enhancement is a transient effect. The results are tentatively explained in terms of an oxygen-vacancy interaction with the vacancies being generated by site switching of the metal atoms.Keywords
This publication has 17 references indexed in Scilit:
- An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free siliconJournal of Physics C: Solid State Physics, 1984
- The oxygen related donor effect in siliconPhysica B+C, 1983
- Diffusivity of oxygen in silicon during steam oxidationApplied Physics Letters, 1982
- A correlation between the electrical breakdown of silicon bipolar transistors and impurity precipitatesJournal of Microscopy, 1980
- On the cooling rates of large-diameter silicon crystalsApplied Physics Letters, 1978
- The effects of heat treatment on dislocation-free oxygen-containing silicon crystalsJournal of Applied Physics, 1977
- The configuration and diffusion of isolated oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1964
- Stress-induced alignment of anisotropic defects in crystalsJournal of Physics and Chemistry of Solids, 1961
- The diffusion of oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957