High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances
- 1 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (19), 1199-1200
- https://doi.org/10.1049/el:20010787
Abstract
A high power wideband feedback amplifier module using AlGaN/GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12 V (Vds) and a gate voltage of –3 V (Vgs).Keywords
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