Direct transition energies in strained ten-monolayer Ge/Si superlattices
- 12 November 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (20), 2610
- https://doi.org/10.1103/physrevlett.65.2610
Abstract
A Comment on the Letter by Zachai et al., Phys. Rev. Lett. 64, 1055 (1990).Keywords
This publication has 6 references indexed in Scilit:
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- Defect Induced Luminescence from MBE Prepared Si/Si1-xGex SuperlatticesMRS Proceedings, 1989