Wigner-function model of a resonant-tunneling semiconductor device
- 15 July 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (3), 1570-1580
- https://doi.org/10.1103/physrevb.36.1570
Abstract
A model of an open quantum system is presented in which irreversibility is introduced via boundary conditions on the single-particle Wigner distribution function. The Wigner function is calculated in a discrete approximation by solution of the Liouville equation in steady state, and the transient response is obtained by numerical integration of the Liouville equation. This model is applied to the quantum-well resonant-tunneling diode. The calculations reproduce the negative-resistance characteristic of the device, and indicate that the tunneling current approaches steady state within a few hundred femtoseconds of a sudden change in applied voltage.Keywords
This publication has 33 references indexed in Scilit:
- Transient Response of a Tunneling Device Obtainefrom the Wigner FunctionPhysical Review Letters, 1986
- Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructureApplied Physics Letters, 1986
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Electrical resistance of disordered one-dimensional latticesPhilosophical Magazine, 1970
- The theory of irreversible processesReports on Progress in Physics, 1963
- Description of States in Quantum Mechanics by Density Matrix and Operator TechniquesReviews of Modern Physics, 1957
- On the Quantum Correction For Thermodynamic EquilibriumPhysical Review B, 1932
- Electrical Discharges in Gases Part II. Fundamental Phenomena in Electrical DischargesReviews of Modern Physics, 1931