Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure
- 21 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (3), 158-160
- https://doi.org/10.1063/1.97210
Abstract
Resonant tunneling has been demonstrated through a double barrier, single quantum well heterostructure in which the barriers have been replaced by thin, short period binary superlattices. The superlattice structure does not exhibit the asymmetry around zero bias in the electrical characteristics normally observed in the conventional AlxGa1−xAs barrier structures, suggestive of reduced roughness at the inverted interface by superlattice smoothing. The structure exhibits an anomalously low barrier height and a peak to valley tunnel current ratio of 1.8:1 at 300 K.Keywords
This publication has 13 references indexed in Scilit:
- Sequential resonant tunneling through a multiquantum well superlatticeApplied Physics Letters, 1986
- Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1985
- Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9 nm GaAs/0.9 nm AlGaAs) as barrier layersApplied Physics Letters, 1985
- Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance deviceJournal of Applied Physics, 1985
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-SuperlatticesJapanese Journal of Applied Physics, 1985
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- All-binary AlAs—GaAs laser diodeIEEE Electron Device Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974