Nitrogen related deep electron trap in GaP

Abstract

The most common electron trap in nitrogen doped GaP (0.45 eV below the conduction band) was studied in detail. It was established that the trap concentration quadratically depends on the N concentration and nearly linearly on the net donor concentration. Recombination enhanced anneal of this trap is accompanied by an increase of the nearest-neighbor nitrogen pair luminescence. A tentative model is suggested to identify this trap as a nitrogen split interstitial pair on phosphorous site.