Interstitial nitrogen defects in gallium phosphide (neutron and electron irradiation)

Abstract

Nitrogen-doped gallium phosphide has been irradiated with fast neutrons or 2 MeV electrons. These treatments lead to the formation of interstitial defects involving nitrogen which give rise to localized vibrational modes at 946.7 cm^-1 (¹⁴N) and 925.2 cm^-1 (¹⁵N). These defects anneal at about 530K.