Self-aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic-chemical vapor deposition
- 15 April 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (8), 607-609
- https://doi.org/10.1063/1.92450
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Nonplanar large optical cavity GaAs/GaAlAs semiconductor laserApplied Physics Letters, 1979
- Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor depositionIEEE Journal of Quantum Electronics, 1979
- Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currentsElectronics Letters, 1979
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969