Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser
- 15 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10), 734-736
- https://doi.org/10.1063/1.90967
Abstract
We report pulsed room‐temperature operation of a nonplanar large optical cavity semiconductor laser. As a result of a single LPE growth in an etched channeled substrate, a curved cavity is created which guides the laser light in both transverse dimensions. Representative lasers exhibit 50‐mA thresholds, 40% differential quantum efficiency, 25‐mW power output without kinks, and stable near‐ and far‐field optical patterns.Keywords
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