Low threshold Be implanted (GaAl)As laser on semi-insulating substrate
- 1 April 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (4), 390-391
- https://doi.org/10.1109/jqe.1980.1070500
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Be-implanted (GaAl)As stripe geometry lasersApplied Physics Letters, 1980
- A monolithically integrated optical repeaterApplied Physics Letters, 1979
- Monolithic integration of an injection laser and a metal semiconductor field effect transistorApplied Physics Letters, 1979
- GaAs-GaAlAs heterostructure lasers on semi-insulating substratesIEEE Transactions on Electron Devices, 1978
- High temperature single-mode cw operation with a junction-up TJS laserApplied Physics Letters, 1978
- Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrateApplied Physics Letters, 1978
- GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctionsApplied Physics Letters, 1978