The dragging of precipitate particles by climbing dislocations in silicon
- 1 January 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (1), 488-489
- https://doi.org/10.1063/1.1661911
Abstract
In situ transmission electron microscope investigation of the annealing of copper precipitate colonies in silicon has demonstrated that the precipitates may be dragged by the climbing dislocations. Both chemical forces, due to the vacancy supersaturation, and elastic line tension forces may cause the particle dragging.Keywords
This publication has 2 references indexed in Scilit:
- In situ transmission electron microscope investigation of the annealing of copper precipitate colonies in siliconJournal of Applied Physics, 1973
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971