Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As
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- 13 March 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (12), 1691-1693
- https://doi.org/10.1063/1.1352701
Abstract
We report improvements in the crystallinity of a III–V-based diluted magnetic semiconductor (Ga, Mn)As by heat treatment (annealing) after growth at comparatively low temperatures. This method can be used to raise the Curie temperature to 100 K without the need for severe optimization of growth conditions, as well as to adjust the material parameters to desired values.Keywords
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