Flux and fluence dependence of disorder produced during implantation of11B in silicon

Abstract

The flux and fluence dependence of disorder produced in silicon during the implantation of ¹¹B has been investigated at room temperature, -50°C. and -120°C. Implantations were carried out with 200 keV ¹¹B ions using current densities in the range from 0.06μA/cm² to 15μA/cm², and the disorder monitored by measuring the energy spectra of backscattered protons which were incident on the sample at 450 keV parallel to a (110) axis. Significant differences in the dependence of the disorder on ¹¹B flux and fluence were observed between the implantations performed at room temperature and those carried out at the two lower temperatures.