POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON
- 1 April 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (7), 227-229
- https://doi.org/10.1063/1.1652790
Abstract
Isochronal annealing studies have been conducted on implanted boron and phosphorus layers in silicon. It is shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation. From the standpoint of conductance, low‐temperature implanting is to be favored.Keywords
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