POLYMORPHISM IN VACUUM-DEPOSITED GaP FILMS

Abstract
GaP films have been vacuum‐deposited onto amorphous substrates by a three‐temperature zone technique. When the films are deposited at elevated temperatures (>500°C) and under a condition of Ga excess, whisker, rod and platelet growth occur in the film. Transmission electron diffraction examination has shown a polymorphic form of GaP to exist in these deposits.

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