LO‐TO Mode Splittings and Dynamic Effective Charges of Oxygen in Reactively Sputtered SiOx Determined by IR Spectroscopy
- 1 June 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 111 (2), K103-K106
- https://doi.org/10.1002/pssb.2221110242
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Infrared Studies of Reactively Sputtered SiOx Films in the Composition Range 0.2 ≦ x ≦ 1.9Physica Status Solidi (b), 1982
- Detection of LO and TO Phonons in Amorphous SiO2 Films by Oblique Incidence of IR LightPhysica Status Solidi (b), 1981
- Chemical bond and related properties of SiO2. VII. Structure and electronic properties of the SiOx region of Si–SiO2 interfacesPhysica Status Solidi (a), 1980
- Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphousandPhysical Review B, 1976
- Infrared Absorption at Longitudinal Optic Frequency in Cubic Crystal FilmsPhysical Review B, 1963