Demonstration of an InAsSb strained-layer superlattice photodiode
- 9 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (19), 1581-1583
- https://doi.org/10.1063/1.99087
Abstract
A photodiode consisting of a p-n junction embedded in an InAs0.09Sb0.91/InSb strained-layer superlattice with equal 130-Å-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 μm at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3×109 cm Hz1/2/W) at 7 μm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.Keywords
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