Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

Abstract

A systematic study of self-organized ${\mathrm{In}}_{\mathrm{0.5}}{\mathrm{Ga}}_{\mathrm{0.5}}\mathrm{As}$ quantum dots (QDs) and islands grown by molecular beam epitaxy on (100) and $\text{(n11)}$ A/B GaAs substrates is given, where n varies from 1 to 5. Low-temperature photoluminescence results show that the properties of the dots have a strong dependence on the substrate orientation as revealed by atomic force microscopy, consistent with the differences in size, shape, and distribution of QDs on different substrates. From (100) to (111) surface, the photoluminescence peak position of dots on B surfaces is found to blueshift more than that on A surfaces. QDs are also formed on (511) A surface. The positional distribution of these dots exhibits a wavy shape, which is related to the corrugated structure of this surface. Two kinds of islands are formed on (111) A surface, but further work is needed to explain the mechanism of these islands.