Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organisation on GaAs (311)B substrate
- 2 February 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (3), 209-211
- https://doi.org/10.1049/el:19950140
Abstract
Continuous-wave (CW) operation of a strained InGaAs quantum disk laser with nanoscale active-structures self-organised on GaAs (311)B substrate is demonstrated at room temperature. The threshold current is ~20 mA, which is considerably lower than that of double quantum well lasers on GaAs (100) substrate grown side-by-side.Keywords
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