Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment
- 20 September 2001
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 13 (40), 8901-8914
- https://doi.org/10.1088/0953-8984/13/40/304
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Electrical properties of p-type GaN:Mg codoped with oxygenApplied Physics Letters, 2001
- Comparison between the Theoretical Prediction of Codoping and the Recent Experimental Evidences in p-Type GaN, AlN, ZnSe, CuInS2 and n-Type DiamondPhysica Status Solidi (b), 1998
- Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin filmsApplied Physics Letters, 1997
- n -type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphineApplied Physics Letters, 1997
- Materials Design of the Codoping for the Fabrication of Low-Resistivity p-Type ZnSe and GaN by ab-initio Electronic Structure CalculationPhysica Status Solidi (b), 1997
- High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopantApplied Physics Letters, 1996
- Unified Approach for Molecular Dynamics and Density-Functional TheoryPhysical Review Letters, 1985
- A local exchange-correlation potential for the spin polarized case. iJournal of Physics C: Solid State Physics, 1972
- Explicit local exchange-correlation potentialsJournal of Physics C: Solid State Physics, 1971
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965