Electrical properties of p-type GaN:Mg codoped with oxygen
- 8 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (2), 222-224
- https://doi.org/10.1063/1.1335542
Abstract
Codoping of p-type GaN with Mg and oxygen was investigated. By codoping with oxygen the hole concentrations increased to at 295 K, an order of magnitude greater than in Mg-doped epilayers. The resistivity of codoped layers decreased from 8 to 0.2 Ω cm upon oxygen codoping. Variable temperature Hall effect measurements indicated that the acceptor activation energy decreases from in Mg-doped films to upon oxygen doping. The higher hole concentration results in part from a decrease in the ionization energy of the acceptor.
Keywords
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