Capacitance and conductance deep level transient spectroscopy in field-effect transistors

Abstract

An analysis of conductance transients in field-effect transistors for small values of drain-source voltage is presented which enables absolute values of trap concentration to be evaluated. The relationships use parameters which can be easily measured as distinct from the estimated values of mobility profiles used in previously published calculations. Excellent quantitative agreement between capacitance and conductance results on large area gallium arsenide field-effect transistors has been obtained. In addition, conductance deep level transient studies have demonstrated that the method of measurement and analysis can be used for micron and submicron devices which are much too small for capacitive measurements.