GaAs p-si-n NEGATIVE RESISTANCE INFRARED EMITTING DIODE AT LIQUID N2 AND ROOM TEMPERATURES
- 1 May 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 4 (9), 162-164
- https://doi.org/10.1063/1.1754014
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963
- RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963
- EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAsApplied Physics Letters, 1963
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962
- Double Injection Diodes and Related DI Phenomena in SemiconductorsProceedings of the IRE, 1962
- Double Injection with Negative Resistance in Semi-InsulatorsPhysical Review Letters, 1962
- Double Injection in InsulatorsPhysical Review B, 1962