Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 291-295
- https://doi.org/10.1016/s0921-4526(99)00447-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si CrystalsSolid State Phenomena, 1999
- Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °CMaterials Science Forum, 1997
- Interstitial oxygen in germanium and siliconPhysical Review B, 1997
- Vacancy- and Acceptor- H Complxes in InpMaterials Science Forum, 1995
- A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in SiliconMaterials Science Forum, 1993
- Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared AbsorptionJournal of the Electrochemical Society, 1989
- Oxygen-Related Defects in SiliconMRS Proceedings, 1985
- EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexesPhysical Review B, 1976
- Infrared Absorption Spectra of Oxygen-Defect Complexes in Irradiated SiliconPhysical Review B, 1966
- New Oxygen Infrared Bands in Annealed Irradiated SiliconPhysical Review B, 1964